GW

Anisotropic Interlayer Exciton in GeSe/SnS van der Waals Heterostructure

Using GW and Bethe–Salpeter equation simulations, we demonstrate the generation of linearly polarized, anisotropic intra- and interlayer excitonic bound states in the transition metal monochalcogenide (TMC) GeSe/SnS van der Waals heterostructure.